By Topic

Reduction of propagation loss in silica-on-silicon channel waveguides formed by electron beam irradiation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Syms, R.R.A. ; Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London ; Tate, T.J.

Low loss is demonstrated at infrared wavelengths in channel guides formed by electron beam irradiation of SiO2 layers on Si substrates. By comparing materials from different PECVD processes, it is shown that substrate losses may largely be eliminated by using a suitable SiO2 thickness, and that extrinsic absorption caused by hydrogen contamination may be reduced by annealing before irradiation. The effectiveness of annealing depends strongly on the original material composition

Published in:

Electronics Letters  (Volume:30 ,  Issue: 18 )