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High-performance vertical-power DMOSFETs with selectively silicided gate and source regions

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4 Author(s)
Shenai, K. ; General Electric. Corp. Res. & Dev., Schenectady, NY, USA ; Piacente, P.A. ; Korman, Charles S. ; Baliga, B.J.

A power FET (field-effect transistor) structure with selectively silicided gate and source region is described. This structure simultaneously lowers the gate sheet-resistance and the source contact resistance. The gate-source isolation was provided by plasma etching conformally deposited chemical vapor deposition (CVD) oxide using a photoresist mask. This structure has resulted in an order of magnitude improvement in the gate sheet resistance and about 25% improvements in the device's on-resistance (the resistance when conducting in the on-state) compared to previously reported nonsilicided conventional power FETs. Extremely low-resistance Al-TiW-TiSi/sub 2/ metallurgy with in situ sputter etching of the silicide surface prior to TiW deposition contributed to the reduction in the on-state resistance. Vertical-power DMOSFETs (double-diffused MOSFET) fabricated using this technology have a specific on-resistance of 0.53 Omega cm/sup 2/ for devices capable of blocking 50 V in the off state.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 4 )