We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Self-aligned In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with graded interface on semi-insulating InP grown by molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Won, T. ; Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA ; Morkoc, Hadis

A self aligned In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As double heterojunction bipolar transistor (HBT) with a graded heterointerface has been grown by molecular-beam epitaxy (MBE) and tested. The DC characteristics of HBT structures with a compositionally graded junction using a linear graded In/sub 0.53/Ga/sub 0.47-x/Al/sub x/As between two ternary layers were investigated. Typical quaternary graded devices with an emitter dimension of 50*50 mu m/sup 2/ exhibited a current gain as high as 1260, as compared to 800 for abrupt devices, at a collector current density of 2.8*10/sup 3/ A/cm/sup 2/.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 3 )