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A 256 K static random-access memory implemented in silicon-on-insulator technology

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2 Author(s)
Van Vonno, N. ; Div. of Mil. & Aerosp., Harris Semicond., Melbourne, FL, USA ; Doyle, B.R.

We discuss a 256 K static random-access memory for space applications, implemented in an advanced silicon-on-insulator technology. Results obtained in electrical characterization, radiation testing and reliability evaluations are discussed. The part is being sampled and will be built in a production submicrometer fabrication facility on 6" starting substrates. The HS-65759 will provide a cost-effective solution for SEU-resistant memory for demanding space applications

Published in:

Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on

Date of Conference:

13-16 Sep 1993