By Topic

A circuit simulation model for bipolar-induced breakdown in MOSFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Pinto-Guedes, M. ; Intel Corp., Santa Clara, CA, USA ; Chan, P.C.

The successful modeling of short-channel transistor breakdown characteristics with effective channel length down to 0.6 μm is reported. The sudden increase in the MOS drain current due to threshold voltage reduction caused by the forward biasing of the source-substrate junction is also modeled with considerable accuracy. This is the first successful application of a short-channel breakdown model in a circuit simulator. Model parameter extraction and installation of the model in the circuit simulator is also discussed

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:7 ,  Issue: 2 )