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A circuit simulation model for bipolar-induced breakdown in MOSFET

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2 Author(s)
Pinto-Guedes, M. ; Intel Corp., Santa Clara, CA, USA ; Chan, P.C.

The successful modeling of short-channel transistor breakdown characteristics with effective channel length down to 0.6 μm is reported. The sudden increase in the MOS drain current due to threshold voltage reduction caused by the forward biasing of the source-substrate junction is also modeled with considerable accuracy. This is the first successful application of a short-channel breakdown model in a circuit simulator. Model parameter extraction and installation of the model in the circuit simulator is also discussed

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:7 ,  Issue: 2 )

Date of Publication:

Feb 1988

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