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MOS2: an efficient MOnte Carlo Simulator for MOS devices

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3 Author(s)
E. Sangiorgi ; Dept. of Electron., Bologna Univ., Italy ; B. Ricco ; F. Venturi

An efficient Monte Carlo device simulator has been developed as a postprocessor of a two-dimensional numerical analyzer based on the drift-diffusion model. The Monte Carlo package analyzes real VLSI MOSFETs in a minicomputer environment, overcoming some existing theoretical and practical problems. In particular, the particle free-flight time distribution is obtained by a new algorithm, leading to a CPU time saving of at least one order of magnitude compared with the traditional approach. To describe rare electron configurations, such as the high-energy tails of the distributions and the particle dynamics in the presence of large retarding fields, a multiple repetition scheme was implemented. Selected applications are presented to illustrate the simulator's capabilities

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:7 ,  Issue: 2 )