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An efficient Monte Carlo device simulator has been developed as a postprocessor of a two-dimensional numerical analyzer based on the drift-diffusion model. The Monte Carlo package analyzes real VLSI MOSFETs in a minicomputer environment, overcoming some existing theoretical and practical problems. In particular, the particle free-flight time distribution is obtained by a new algorithm, leading to a CPU time saving of at least one order of magnitude compared with the traditional approach. To describe rare electron configurations, such as the high-energy tails of the distributions and the particle dynamics in the presence of large retarding fields, a multiple repetition scheme was implemented. Selected applications are presented to illustrate the simulator's capabilities
Published in:
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
(Volume:7
,
Issue:
2
)
Date of Publication: Feb 1988
- Page(s):
- 259 - 271
- ISSN :
- 0278-0070
- INSPEC Accession Number:
- 3130660
- Digital Object Identifier :
- 10.1109/43.3157
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb 1988
- Sponsored by :
- IEEE Council on Electronic Design Automation
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