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Nonstationary carrier dynamics in quarter-micron Si MOSFETs

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3 Author(s)
Tomizawa, M. ; LSI Labs., NTT, Kanagawa, Japan ; Yokoyama, K. ; Yoshii, A.

An application of Monte Carlo particle and relaxation time approximation modeling to quarter-micron Si MOSFETs is presented. Through a comparison between these two nonstatic models and a conventional model, nonstationary carrier transport is shown to dominate in 0.4 μm or less channel devices, with peak velocities exceeding 1.0×107 cm/s. It is shown that the relaxation time approximation model tends to overestimate nonstationary carrier dynamics, especially the energy distribution

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:7 ,  Issue: 2 )

Date of Publication:

Feb 1988

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