A current memory cell with switch feedthrough reduction by error feedback

A new switch feedthrough suppressing current memory cell, capable of accurately memorizing low current levels is presented. The scheme operates by feeding back a fraction of the error current to the storage node whose voltage is adjusted so that the error is reduced to zero. Using the feedback compensation scheme, absolute current error of less than 0.1% was achieved even at ultra-low current levels of 10 nA. The negative feedback circuit consumes negligibly low power and can be laid in a very small area. With this scheme, memory accuracy is traded for error correction speed, a feature common to all feedback-based switch feedthrough reduction schemes. The feedback compensated current memory cell can be used for low-power high-background infrared focal-plane readout electronics featuring in-pixel background suppression.<
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