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A figure of merit for the high-frequency noise behavior of bipolar transistors

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5 Author(s)
de Vreede, L.C.N. ; Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands ; de Graaff, H.C. ; Hurkx, G.A.M. ; Tauritz, J.L.
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In this paper a new figure of merit for high frequency noise behavior for use in the evaluation and development of bipolar silicon process technology is introduced. Basic low noise design rules for optimum transistor biasing and emitter scaling are proposed

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Solid-State Circuits, IEEE Journal of  (Volume:29 ,  Issue: 10 )