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A boundary element method for modeling viscoelastic flow in thermal oxidation

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3 Author(s)
Tung, T.-L. ; MIT, Cambridge, MA, USA ; Connor, J. ; Antoniadis, D.A.

At temperatures encountered in thermal oxidation, silicon dioxide flows viscoelastically, A reduced-dimension, generalized boundary element method for modeling such a problem has been developed. A modified Kelvin's solution is used as the kernel; constant-velocity loading is chosen to operate with a wide range of stress relaxation times. Simulation results are reported for simple cases of focal oxidation

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:7 ,  Issue: 2 )