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Numerical simulation of the gas immersion laser doping (GILD) process in silicon

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3 Author(s)
E. Landi ; Electron. Lab., Stanford Univ., CA, USA ; P. G. Carey ; T. W. Sigmon

A simulation program that models the gas immersion laser doping (GILD) process is described. This program, which is called LASERMELT, first solves for the silicon melt depth and melt time versus laser energy fluence, and then the impurity dopant profiles using a dopant incorporation and impurity diffusion model. Experimental and simulated dopant profiles and sheet resistance values are given as functions of the laser energy fluence and number of pulses. The determination of liquid phase impurity diffusion coefficients in molten silicon is also described

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:7 ,  Issue: 2 )