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Two-dimensional modeling of ion implantation induced point defects

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2 Author(s)
Hobler, Gerhard ; Inst. fuer Allgemeine Elektrotech. und Electron., Tech. Univ. of Vienna, Austria ; Selberherr, S.

An analytical model for the description of ion-implantation-induced damage profiles is presented. The model is based on extensive Monte Carlo simulations of B-, P-, As-, and Sb-implantations in Si. One-dimensional profiles are described by a Gaussian function and an exponential function joined together continuously with continuous first derivatives. The two-dimensional model has previously been developed by the authors for dopant profiles and is demonstrated to apply well to point defect distributions. Parameters have been obtained for the four ions by fitting the model to the Monte Carlo results, and they are provided in the form of tables for the energy range of 10-300 keV (for the 1D model 1-300 keV). The Monte Carlo simulations are based on the binary collision approximation, the assumption of a random target, and the validity of the linear collision cascade theory. The importance of energy transport by recoils is pointed out

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:7 ,  Issue: 2 )