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8/spl times/8 independently addressable vertical-cavity surface-emitting laser diode arrays grown by MOCVD

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4 Author(s)
Kohama, Y. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Ohiso, Y. ; Fukushima, S. ; Kurokawa, T.

The first 8/spl times/8 independently addressable vertical-cavity surface-emitting laser diode arrays have been grown by MOCVD. They showed not only good I-L characteristics, such as low threshold current and voltage, but excellent uniformity of threshold current (3.39/spl plusmn/O.11 mA) and lasing wavelength (850.93/spl plusmn/0.28 nm). These results shows that the high-productivity of MOCVD growth technique is applicable to the fabrication of such laser diode arrays.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:6 ,  Issue: 8 )