We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Differential gain, refractive index, and linewidth enhancement factor in high-speed GaAs-based MQW lasers: influence of strain and p-doping

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Schonfelder, A. ; Inst. fur Hochfrequenztechnik und Quantenelektronik, Karlsruhe Univ., Germany ; Weisser, S. ; Ralston, J.D. ; Rosenzweig, J.

The addition of strain and p-doping in high-speed GaAs-based MQW lasers are assessed experimentally in terms of their potential for both increasing the differential gain, /spl part/g//spl part/N, and reducing the modulus of the differential refractive index, |/spl part/n//spl part/N|, in order to decrease the linewidth enhancement factor, /spl alpha/. The increased differential gain with strain alone is found to be offset by a corresponding increase of |/spl part/n//spl part/N|. The further addition of p-doping, on the other hand, simultaneously increases /spl part/g//spl part/N and decreases |/spl part/n//spl part/N|, yielding a substantial reduction in /spl alpha/.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:6 ,  Issue: 8 )