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Wavelength tunable two-pad ridge waveguide distributed Bragg reflector InGaAs-GaAs quantum well lasers

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5 Author(s)
Smith, G.M. ; Microelectron. Lab., Illinois Univ., Urbana, IL ; Hughes, J.S. ; Lammert, R.M. ; Osowski, M.L.
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Carrier injection in the grating section is used to tune the emission wavelength of a single growth step, single frequency, ridge waveguide InGaAs/GaAs quantum well distributed Bragg reflector laser with two top contacts. Single longitudinal mode emission with over 30 dB of sidemode suppression is observed throughout a tuning range of 6 nm with 60 mA of injection current in the grating section. The tuning mechanism for these devices is dominated by current injection heating rather than carrier depression of the refractive index

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Electronics Letters  (Volume:30 ,  Issue: 16 )