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Active GaAs sensor element for dynamic pressure measurements

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6 Author(s)
Schweeger, G. ; Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt ; Lang, C. ; Fricke, K. ; Hartnagel, H.L.
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A piezoelectric pressure sensor is presented which consists of a GaAs MESFET in which the transverse piezoelectric effect is used to charge the gate pad. The MESFET itself acts as an integrated charge amplifier. The sensor gives output signals which are comparable to those of a much bulkier commercial measurement system. The sensitivity achieved is 200 mV/bar in the range 0-20 bar

Published in:

Electronics Letters  (Volume:30 ,  Issue: 16 )