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Vertical-cavity surface-emitting lasers integrated onto silicon substrates by PdGe contacts

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5 Author(s)
H. Fathollahnejad ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ ; D. L. Mathine ; R. Droopad ; G. N. Maracas
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Vertical-cavity surface-emitting lasers (VCSELs) have been integrated onto an aluminium coated silicon substrate. The InGaAs top-emitting VCSELs were grown by molecular beam epitaxy and individual lasers were defined by high energy proton implantation. The substrate was removed by a new substrate removal process and the lasers were bonded to an aluminised silicon substrate using a Pd/Ge/InSn contact. Threshold currents below 5.5 mA and output powers of ~1 mW were obtained for 40 μm VCSELs bonded to Si

Published in:

Electronics Letters  (Volume:30 ,  Issue: 15 )