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Selective gate recess etching of GaInAs/AlInAs based HEMTs using a CH4/H2 plasma without subsequent annealing

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3 Author(s)
Thomas, K.M. ; Lab. of Electromagnetic Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich ; Patrick, W. ; Bachtold, W.

A methane hydrogen plasma has been used to define gate recesses through a polymer mask selectively on GaInAs/InAlAs based HEMT devices. No subsequent annealing was necessary and the devices exhibited comparable gm and idss values with much better uniformity than conventional wet etched devices

Published in:

Electronics Letters  (Volume:30 ,  Issue: 15 )