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Base current reversal in bipolar transistors and circuits: a review and update

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1 Author(s)
J. S. Yuan ; Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA

A detailed study of base current reversal in silicon bipolar transistors and GaAs heterojunction bipolar transistors has been made. The physics of impact ionisation is presented followed by modelling of avalanche multiplication in devices. The effects of base current reversal on analogue and digital circuit operation are discussed

Published in:

IEE Proceedings - Circuits, Devices and Systems  (Volume:141 ,  Issue: 4 )