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44-GHz high-efficiency InP-HEMT MMIC power amplifier

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10 Author(s)
F. Lam ; Microelectron. Circuits Div., Hughes Aircraft Co., Torrance, CA, USA ; M. Matloubian ; A. Igawa ; C. Chou
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A high-efficiency power amplifier was developed using 0.15-μm gatelength, InP-based (GaInAs/AlInAs/InP), HEMT MMIC technology. The amplifier demonstrated state-of-the-art performance. The output power at 1-dB compression point was 28 dBm at 44.5 GHz. The corresponding power-added efficiency was 31% and gain was 7 dB. The total chip area was 2.5 mm2.

Published in:

IEEE Microwave and Guided Wave Letters  (Volume:4 ,  Issue: 8 )