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A high-efficiency power amplifier was developed using 0.15-μm gatelength, InP-based (GaInAs/AlInAs/InP), HEMT MMIC technology. The amplifier demonstrated state-of-the-art performance. The output power at 1-dB compression point was 28 dBm at 44.5 GHz. The corresponding power-added efficiency was 31% and gain was 7 dB. The total chip area was 2.5 mm2.