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Twelve-channel strained-layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array for WDM applications by selective-area MOCVD

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5 Author(s)
T. M. Cockerill ; Microelectron. Lab., Illinois Univ., Urbana, IL, USA ; R. M. Lammert ; D. V. Forbes ; M. L. Osowski
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Selective-area epitaxy is used to fabricate a twelve-channel strained layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array suitable for wavelength division multiplexing applications. The measured wavelength separation between elements is 1.9 nm, in good agreement with the 2 nm design value.<>

Published in:

IEEE Photonics Technology Letters  (Volume:6 ,  Issue: 7 )