By Topic

Twelve-channel strained-layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array for WDM applications by selective-area MOCVD

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Cockerill, T.M. ; Microelectron. Lab., Illinois Univ., Urbana, IL, USA ; Lammert, R.M. ; Forbes, D.V. ; Osowski, M.L.
more authors

Selective-area epitaxy is used to fabricate a twelve-channel strained layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array suitable for wavelength division multiplexing applications. The measured wavelength separation between elements is 1.9 nm, in good agreement with the 2 nm design value.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:6 ,  Issue: 7 )