Cart (Loading....) | Create Account
Close category search window
 

Deep-submicrometer channel design in silicon-on-insulator (SOI) MOSFET's

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Su, L.T. ; Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA ; Jacobs, J.B. ; Chung, J.E. ; Antoniadis, D.A.

Short-channel effects in deep-submicrometer SOI MOSFET's are explored over a wide range of device parameters using two-dimensional numerical simulations. To obtain reduced short-channel effects in SOI over bulk technologies, the silicon film thickness most be considerably smaller than the bulk junction depth because of an additional charge-sharing phenomenon through the SOI buried oxide. The optimal design space, considering nominal and short-channel threshold voltage, shows ample design options for both fully and partially depleted devices, however, manufacturing considerations in the 0.1 /spl mu/m regime may favor partially depleted devices.<>

Published in:

Electron Device Letters, IEEE  (Volume:15 ,  Issue: 9 )

Date of Publication:

Sept. 1994

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.