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Impact ionization modeling using simulation of high energy tail distributions

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5 Author(s)
Jae-Gyung Ahn ; Dept. of Electron. Eng., Seoul Nat. Univ., South Korea ; Chiang-Sheng Yao ; Chan Hyeong Park ; Hong-Shick Min
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A new model for the impact ionization using the tail electron density is proposed. A new hydrodynamic model is used to compute the tail carrier quantities. The discretization method and numerical procedures are explained. The model parameters are extracted from the space-dependent Monte Carlo simulations. The simulated results for an n/sup +/-n/sup -/-n/sup +/ diode and a DILDD n-MOSFET are shown and give good agreement with Monte Carlo simulations and measurements, respectively.<>

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Electron Device Letters, IEEE  (Volume:15 ,  Issue: 9 )