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Ultrahigh and controllable drain current peak-to-valley ratio in negative resistance field-effect transistors with a strained InGaAs channel

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2 Author(s)
Lai, Jiun‐Tsuen ; Dept. of Electr. Eng., Tsing-Hua Univ., Hsinchu, Taiwan ; Lee, Joseph Ya‐min

Negative resistance field-effect transistor (NERFET) devices using either strained InGaAs or unstrained GaAs channel layers have been fabricated. The strained InGaAs channel NERFET's show strong negative differential resistance and large drain current peak-to-valley ratio. The peak-to-valley ratio of the InGaAs channel NERFET is more than 3000 at room temperature and larger than one million (10/sup 6/) at 77 K. The peak-to-valley ratio is controllable by adjusting the collector voltage.<>

Published in:

Electron Device Letters, IEEE  (Volume:15 ,  Issue: 9 )

Date of Publication:

Sept. 1994

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