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Microwave mixers employing multiple-barrier semiconductor heterostructure devices

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1 Author(s)
G. B. Tait ; Dept. of Electr. Eng., US Mil. Acad., West Point, NY, USA

Experimental data on mixer performance of unipolar semiconductor heterostructure diodes containing bulk alloy-ramp barriers are presented. Prototype AlxGa1-xAs/GaAs heterostructures containing one, two, and four barriers are fabricated by MBE and tested in a single-ended mixer circuit at 10 GHz. The devices with two and four barriers, which exhibit improved performance over the single-barrier device, achieve conversion losses between 4 and 6 dB and noise temperature ratios between 1.5 and 2 at 300 K. Several significant advantages over contending Schottky diodes are also discussed. The results indicate that multiple-barrier devices are good candidates for use in microwave and millimeter-wave mixer circuits

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:42 ,  Issue: 9 )