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Room-temperature single-electron memory

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6 Author(s)
Yano, K. ; Central Res. Lab., Hitachi Ltd, Tokyo, Japan ; Ishii, Tomoyuki ; Hashimoto, T. ; Kobayashi, T.
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This paper presents room-temperature operation, for the first time, of single-electron memory, in which one electron represents one bit of information. This is made possible by our new one-transistor memory configuration which has a very high charge sensitivity (conventionally, three circuit elements are needed). Another new technique, which facilitates single-electron memory, is the ultra-thin (3.4 nm) poly-Si film used for the active region, in which sub-10-nm-width current channels and storage dots are naturally formed. In the fabricated poly-Si TFT's a single electron is stored (or “written”) on a low-energy silicon island, and the number of stored electrons is counted (or “read”) by the quantized threshold-voltage shift. Single-electron memory provides the potential for new nonvolatile RAM's, suitable for mobile computers/communicators

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 9 )