Referenced Items are not available for this document.
Transport properties of ungated Si/Si1-xGex are studied by an ensemble Monte Carlo technique. The device performance is studied with a quantum hydrodynamic equation method using the Monte Carlo results. The phonon-scattering limited mobility is enhanced over bulk Si, and is found to reach 23000 cm2/Vs at 77 K and 4000 cm2/Vs at 300 K. The saturation velocity is increased slightly compared with the bulk value at both temperatures. A significant velocity overshoot, several times larger than the saturation velocity, is also found. In a typical modulation-doped field-effect-transistor, the calculated transconductance for a 0.18 μm gate device is found to be 300 mS/mm at 300 K. Velocity overshoot in the strained Si channel is observed, and is an important contribution to the transconductance. The inclusion of the quantum correction increases the total current by as much as 15%
Published in:
Electron Devices, IEEE Transactions on
(Volume:41
,
Issue:
9
)
Date of Publication: Sep 1994
- Page(s):
- 1513 - 1522
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4774268
- Digital Object Identifier :
- 10.1109/16.310101
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Sep 1994
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
