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Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications

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5 Author(s)
Kyushik Hong ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Marsh, P.F. ; Geok-Ing Ng ; Pavlidis, D.
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The feasibility of InP-based planar heteroepitaxial diodes for terahertz multiplier and mixer applications is explored. A variety of In xAl1-xAs/In0.53Ga0.47As (x=0.52, 0.4) diodes have been grown using LP-MOVPE and this allows systematic characterization of the effects of barrier thickness, InAs mole fraction and active layer thickness on the diode DC and RF performance. A new fabrication technology is developed for planar diodes using dielectric-free air-bridged anode fingers and trench isolation to minimize series resistance and parasitic capacitance. A qualitative model is suggested to explain the forward current conduction mechanism of the reported diodes. The control of forward current conduction and reverse leakage by epitaxial design together with the demonstrated figure-of-merit cutoff frequency of 2.6 THz make the diodes suitable for multiplier and mixer terahertz applications

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 9 )