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Analysis of an InGaAsP/InP twin-overlayed-waveguide switch

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4 Author(s)
Maciejko, R. ; Dept. of Eng. Phys., Ecole Polytech., Montreal, Que., Canada ; Champagne, A. ; Reid, R. ; Mani, H.

This paper examines the design considerations for a device combining vertical stacking of waveguides, carrier injection, and codirectional switching in InGaAsP/InP materials and demonstrates that many favorable features can be found in such a device, namely, an interaction length of about 408 μm, switching with about 1 V with an injection current density of the order of 108-988 A/cm2 and a channel isolation up to 25 db with an absorption loss of under 1 dB. We base our argument on a self-consistent numerical calculation

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Quantum Electronics, IEEE Journal of  (Volume:30 ,  Issue: 9 )