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An improved density-matrix theory is developed that can treat both spectral hole burning and carrier heating self consistently. Various intraband and interband relaxation terms characterized by different relaxation times and quasi-equilibrium distributions are introduced into the density-matrix equations within a relaxation-time approximation. Conservation of total number and energy densities of carrier systems in each band is considered to determine the quasi-equilibrium distributions. Formalism is applied to the calculation of the transient optical nonlinearity of highly carrier-injected semiconductors. Spectral hole burning and carrier-heating effects on the spectral and temporal characteristics are then clarified. In particular, the significant four-wave-mixing effect due to carrier heating is pointed out. An experiment that can be used to directly prove the existence of the carrier-heating effects on gain nonlinearity is also proposed
Published in:
Quantum Electronics, IEEE Journal of
(Volume:30
,
Issue:
9
)
Date of Publication: Sep 1994
- Page(s):
- 1981 - 1994
- ISSN :
- 0018-9197
- INSPEC Accession Number:
- 4781001
- Digital Object Identifier :
- 10.1109/3.309856
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Sep 1994
- Sponsored by :
- IEEE Photonics Society
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