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Spectral hole burning and carrier-heating effect on the transient optical nonlinearity of highly carrier-injected semiconductors

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2 Author(s)
Nambu, Y. ; Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan ; Tomita, Akihisa

An improved density-matrix theory is developed that can treat both spectral hole burning and carrier heating self consistently. Various intraband and interband relaxation terms characterized by different relaxation times and quasi-equilibrium distributions are introduced into the density-matrix equations within a relaxation-time approximation. Conservation of total number and energy densities of carrier systems in each band is considered to determine the quasi-equilibrium distributions. Formalism is applied to the calculation of the transient optical nonlinearity of highly carrier-injected semiconductors. Spectral hole burning and carrier-heating effects on the spectral and temporal characteristics are then clarified. In particular, the significant four-wave-mixing effect due to carrier heating is pointed out. An experiment that can be used to directly prove the existence of the carrier-heating effects on gain nonlinearity is also proposed

Published in:

Quantum Electronics, IEEE Journal of  (Volume:30 ,  Issue: 9 )