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Characterization of alloyed AuGe/Ni/Au ohmic contacts to n-doped GaAs by measurement of transfer length and under the contact sheet resistance

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1 Author(s)
Henry, H.G. ; Westinghouse Electr. Corp., Baltimore, MD, USA

The results of systematic measurements of transfer length L T and sheet resistance under the contact Rsk for alloyed AuGe/Ni/Au ohmic contacts to GaAs active layers prepared both by VPE (vapor-phase epitaxy) and by direct selective ion implantation are given. The end resistance measurement technique was used. Also reported are the more commonly measured specific interfacial resistance ρc and unit-width resistance rc. LT was relatively constant at 1.35 μm. A wide range for Rsk was observed, including values both higher and lower than the pre-alloyed value. It correlates with ρc and rc and demonstrates that variation in the GaAs/contact interface is the source of the commonly observed wide scatter in these parameters

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Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 7 )