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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:36 Issue:7 Help

Substrate current model for submicrometer MOSFETs based on mean free path analysis

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2 Author(s)
Hwang, C.G. ; Integrated Circuits Lab., Stanford Univ., CA, USA ; Dutton, R.W.

The nonequilibrium effects of hot carriers are investigated to analyze avalanche generation for submicrometer MOSFET devices. A simple analytical expression for the impact ionization utilizing the mean free path concept is developed. It is incorporated into a conventional drift-diffusion equation solver (PISCES) to obtain the substrate current in submicrometer MOSFET devices. The transconductance for high drain bias and breakdown conditions are analyzed based on the proposed impact ionization model

Published in:
Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 7 )

Date of Publication: Jul 1989

Page(s):
1348 - 1354
ISSN :
0018-9383
INSPEC Accession Number:
3456423
Digital Object Identifier :
10.1109/16.30940
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Jul 1989
Sponsored by :
IEEE Electron Devices Society

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