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Hot-carrier-induced degradation in ultra-thin, fully-depleted, deep-submicron nMOS and pMOS SOI transistors

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4 Author(s)
Tsuchiya, T. ; NTT LSI Labs., Kanagawa, Japan ; Ohno, T. ; Kado, Y. ; Kai, J.

The hot-carrier-injected oxide region is systematically investigated for fully depleted surface-channel (SC) nMOS and SC- and buried-channel pMOSFETs fabricated on an ultra-thin (50 nm)-film SIMOX wafer. NMOSFET degradation is shown to be caused mainly by hot-carriers injected into the drain side of the front oxide and pMOSFET degradation by hot-electrons injected into the drain side of both the back oxide and the front oxide. It is shown experimentally for the first-time that these fully depleted devices with effective channel lengths of 0.1-0.2 /spl mu/m have fairly high hot-carrier immunity, even for single-drain structures.<>

Published in:

Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International

Date of Conference:

11-14 April 1994