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Modification and characterization of insulator-semiconductor interface in a.c. thin film electroluminescent display devices

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5 Author(s)
Britton, J.D. ; Dept. of Electr. Eng., Texas Univ., El Paso, TX, USA ; Traylor, M.E. ; Bhaskaran, S. ; McClure, J.C.
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A technique for modifying the characteristics of a.c. thin film electroluminescent (ACTFEL) display devices by incorporating a thin (1-5 nm) aluminum layer at the phosphor-dielectric interfaces was investigated. This modification resulted in a reduction in the threshold voltage. The change in the effective density of states and the energy levels of these interface states was estimated by calculating the luminescence-time characterization of the modified and the control ACTFEL devices and matching them against the measured characteristics.<>

Published in:

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Date of Conference:

13-16 Dec. 1992