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Monolithic integration of InGaAs/InAlAs resonant tunneling diode and HEMT for single-transistor cell SRAM application

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4 Author(s)
Y. Watanabe ; Fujitsu Labs. Ltd., Atsugi, Japan ; Y. Nakasha ; K. Imanishi ; M. Takikawa

In this paper we report the first monolithic integration of InGaAs/InAlAs resonant tunneling diode (RTD) and high electron mobility transistor (HEMT) epitaxially grown on an InP substrate. The transconductance for a 1- mu m gate HEMT was 400 mS/mm and the peak-to-valley current ratio of the RTD was 3.1. Using this integrated structure, we demonstrate a static RAM cell circuit, consisting of a single transistor with two RTDs on the transistor. The memory cell circuit exhibits bistability, based on the RTD's negative differential resistance (NDR), at supply voltages from 0.6 to 1.1 V.<>

Published in:

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Date of Conference:

13-16 Dec. 1992