Referenced Items are not available for this document.
A new test methodology is described for identifying defect-related failures of EEPROM memory cells. Currently, tunnel oxide Qbd tests are widely used to monitor the quality of the tunnel dielectric. These Qbd tests, however, cannot provide information on the defect-driven failure mechanisms that may limit manufacturing yield. A systematic sequence of tests is described that can be used to determine if there is a single defective cell present within a large test array of EEPROM cells, and to identify the nature of the defect. The test sequence is suitable for inclusion as part of the automated Electrical Test (ET) used in the manufacture of EEPROM or Flash EEPROM memories
Published in:
Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on
Date of Conference: 22-25 Mar 1994
- Page(s):
- 114 - 118
- Meeting Date :
- 22 Mar 1994-25 Mar 1994
- Print ISBN:
- 0-7803-1757-2
- INSPEC Accession Number:
- 4715653
- Conference Location :
- San Diego, CA
- Digital Object Identifier :
- 10.1109/ICMTS.1994.303492
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
