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Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable Bragg filters

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1 Author(s)
Weber, J.-P. ; Fibre Opt. Res. Center, Ericsson Components AB, Stockholm, Sweden

A model for the refractive index of InGaAsP and its dependence on the carrier density is presented. Full transport calculations for electrons and holes in heterostructures, including temperature effects, are used to show that the maximum injected carrier density is limited by electron heterojunction leakage for low-cladding doping and by recombination in the tuning layer for high-cladding doping. With the effective index method, we can then compute the maximum propagation constant change as a function of the waveguide geometry. Thermal effects are important only in the case of poor heatsinking. Using these results, we can estimate a maximum tuning range of more than 15 nm for optimized Bragg reflection gratings

Published in:

Quantum Electronics, IEEE Journal of  (Volume:30 ,  Issue: 8 )

Date of Publication:

Aug 1994

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