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Achieving broad-area laser diodes with high output power and single-lobed far-field patterns in the lateral direction by loading a modal reflector

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4 Author(s)
K. Shigihara ; Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan ; Y. Nagai ; S. Kakimoto ; K. Ikeda

A modal reflector, which consists of a high-reflectivity region surrounded by low-reflectivity regions, is added to the front facet of two types of broad-area laser diodes (LD's) to control the lateral modes. One type of LD is the self-aligned laser with a bent active layer (SBA LD) that has a real index-guiding mechanism. The other is a planar-stripe LD that consists of a Zn-diffused region to confine the current flow and has a gain-guiding mechanism. For the SBA LD's with a modal reflector, stable single-lobed far-field patterns (FFP's) are obtained at up to 0.3 and 0.4 W output powers in continuous wave (CW) operation and pulsed operation, respectively. In addition, for planar-stripe LD's with a modal reflector, stable single-lobed FFP's are obtained at up to 0.4 W in CW operation. The lateral modes inside the cavity are analyzed by utilizing a slit model and FFP's are calculated. Good agreement is found between experimental and calculated FFP's for a large Fresnel number

Published in:

IEEE Journal of Quantum Electronics  (Volume:30 ,  Issue: 8 )