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Room-temperature pulsed operation of AlGaAs/GaAs vertical-cavity surface-emitting laser diode on Si substrate

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4 Author(s)
Egawa, T. ; Res. Center for Micro-Structure Devices, Nagoya Inst. of Technol., Japan ; Hasegawa, Y. ; Jimbo, T. ; Umeno, M.

Room-temperature pulsed AlGaAs/GaAs vertical-cavity surface-emitting laser diode (VCSELD) has been grown on Si substrate using metalorganic chemical vapor deposition. The VCSELD structure grown on Si substrate consists of a single quantum well active layer and a 20-pair of AlAs/GaAs distributed Bragg reflector (DBR). The measured reflectivity of the 20-pair of AlAs/GaAs DBR was 93% at the wavelength of 860 nm. The VCSELD on Si substrate exhibited a threshold current of 79 mA and a threshold current density of 4.9 kA/cm/sup 2/ under pulsed condition at room temperature.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:6 ,  Issue: 6 )

Date of Publication:

June 1994

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