Cart (Loading....) | Create Account
Close category search window
 

Room-temperature pulsed operation of AlGaAs/GaAs vertical-cavity surface-emitting laser diode on Si substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Egawa, T. ; Res. Center for Micro-Structure Devices, Nagoya Inst. of Technol., Japan ; Hasegawa, Y. ; Jimbo, T. ; Umeno, M.

Room-temperature pulsed AlGaAs/GaAs vertical-cavity surface-emitting laser diode (VCSELD) has been grown on Si substrate using metalorganic chemical vapor deposition. The VCSELD structure grown on Si substrate consists of a single quantum well active layer and a 20-pair of AlAs/GaAs distributed Bragg reflector (DBR). The measured reflectivity of the 20-pair of AlAs/GaAs DBR was 93% at the wavelength of 860 nm. The VCSELD on Si substrate exhibited a threshold current of 79 mA and a threshold current density of 4.9 kA/cm/sup 2/ under pulsed condition at room temperature.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:6 ,  Issue: 6 )

Date of Publication:

June 1994

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.