Cart (Loading....) | Create Account
Close category search window
 

Radiation hard LOCOS field oxide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Neumeier, K. ; Fraunhofer-Inst. fur Festkorpertechnologie, Munich, Germany ; Bruemmer, H.P.

It is known that radiation hard field oxides (FOX) can be produced by combination of a thin thermal oxide and a thick P- or As-doped deposited oxide. The doping atoms serve as recombination centers and electron traps for radiation induced charges. This results in a distinctly lower oxide charge at the Si/SiO2 interface compared to conventional thermal oxides and, therefore, higher radiation hardness. The radiation resistance of thermally grown FOX for LOCOS isolation cannot be improved much by changes in oxidation parameters. The newly developed radiation hard FOX is produced by local oxidation of P-doped poly-Si. This method preserves the advantages of the LOCOS technology. To distinguish this process from the regular LOCOS process we termed it LOPOX (Local Polysilicon Oxidation). Even with low doping concentrations radiation hardness is improved considerably compared to conventional thermal oxides

Published in:

Nuclear Science, IEEE Transactions on  (Volume:41 ,  Issue: 3 )

Date of Publication:

Jun 1994

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.