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Evidence of negative charge trapping in high temperature annealed thermal oxide

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4 Author(s)
Paillet, P. ; CEA, Centre d''Etudes de Bruyeres-le-Chatel, France ; Herve, D. ; Leray, J.L. ; Devine, R.A.B.

The effect of high temperature processing of Si/SiO2/Si sandwich structures has been studied on a thermal dry oxide, by considering charge trapping after irradiation. The radiation-induced charge trapping is shown to be very different in annealed and unannealed structures. The latter reveal interfacial trapping behavior, whereas annealed structures exhibit a large trapping of both holes and electrons in the bulk of the oxide, similar to SIMOX oxide behavior

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Nuclear Science, IEEE Transactions on  (Volume:41 ,  Issue: 3 )