Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search-a new concept

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Lin, F. ; Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore ; Kompa, G.

A new optimization formulation is presented for efficient FET model parameter extraction, in which data-fitting is carried out in multi reference planes instead of only one, and the objective function is minimized by a bidirectional search technique. As an example of application, all parameters of a commonly used 15-element small-signal FET equivalent circuit model are clearly identified from only one set of measured S-parameters. A self-consistent generation of starting values can be involved regarding the FET in the passive pinch-off operating mode. Moreover, applying multi-bias data-fitting, which is performed without increasing the number of ordinary optimization variables, yields a robust determination of both the overall bias-independent parasitics and the bias-dependent intrinsic elements. For demonstration results are presented for a 0.5-μm MESFET

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:42 ,  Issue: 7 )