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GaAs MESFET active resonant circuit for microwave filter applications

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1 Author(s)
D. G. Haigh ; Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

Inverting and noninverting active integrator circuits are compensated for the effect of finite output conductance of the GaAs MESFET by the addition of capacitors and then used to realize an active tuned circuit resonating at 1.5 GHz with fully controllable Q-factor. The active tuned circuit is promising for implementing high-order IF filters at low-microwave frequencies

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:42 ,  Issue: 7 )