By Topic

Variation of intensity noise and frequency noise with the spontaneous emission factor in semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Yamada, M. ; Dept. of Electr. & Comput. Eng., Kanazawa Univ., Japan

The intensity noise level and the spectral line-width of semiconductor injection lasers are theoretically analyzed. Approximated but simple forms representing these characteristics are found to give criteria for various types and sizes of cavity, including microcavity lasers. The noise and the line-width are reduced by operation with high injection current or high optical power in general. For operation at a low-power level in the microcavity laser, increase of the spontaneous emission factor as well as reduction of the threshold current level and the threshold gain level are important to get a low noise level and narrow line-width

Published in:

Quantum Electronics, IEEE Journal of  (Volume:30 ,  Issue: 7 )