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InP-based single heterojunction bipolar transistors with improved breakdown characteristics

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4 Author(s)
F. Ren ; AT&T Bell Labs., Murray Hill, NJ ; C. R. Abernathy ; S. J. Pearton ; P. W. Wisk

InP-based heterojunction bipolar transistors (HBTs) have been fabricated from material grown by metal organic molecular beam epitaxy (MOMBE) using InGaAsP with a bandgap of 0.95 eV as both the collector and base material. The 400 Å collector was undoped with an electron concentration of 6×1016 cm-3 and the 850 Å base layer was doped with Mg to a hole concentration of 1019 cm-3. The DC current gain of a large area (90 μm diameter) device was measured to be 340 with a base sheet resistance of 760 Ω/□. The collector and base ideality factors were 1.1 and 1.4, respectively. The breakdown voltage VCEO of 7.5 V represents a significant improvement over similar devices with conventional InGaAs collector and base layers

Published in:

Electronics Letters  (Volume:30 ,  Issue: 14 )