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Gunn effect in heterojunction bipolar transistors

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2 Author(s)
V. A. Posse ; Dept. of Electr. Eng., California Univ., Los Angeles, CA ; B. Jalali

The Gunn effect in III-V heterojunction bipolar transistors is investigated using hydrodynamic simulations. It is shown that Gunn domains nucleate and propagate in the collector drift region of an npn AlGaAs-GaAs transistor in which the electric field at the base-collector space charge region is properly engineered

Published in:

Electronics Letters  (Volume:30 ,  Issue: 14 )