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Charge trapping and polarity dependence of interface state generation in nitrided oxide gate dielectric by electron photoinjection

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6 Author(s)
X. -J. Yuan ; Dept. of Electr. Eng. & Electron., Liverpool Univ. ; J. S. Marsland ; W. Eccleston ; D. Bouvet
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The polarity dependence of interface state (Du) generation in NH3-nitrided oxide MOS capacitors has been studied by the internal photoemission (IPE) electron injection technique. A greater Du(mg) generation rate has be found for IPE electron injection from the Si substrate than from the Al gate at low injection fluence <1016 electron/cm2. The positive charge generation has also been observed during IPE electron injection from Si substrate. The high frequency C-V and photo-IV measurements indicate that the location of generated positive charge is near the Si/nitrided oxide interface

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Electronics Letters  (Volume:30 ,  Issue: 14 )